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Discrete & Wafer
TO-247 Discrete
SiC MOSFET, SiC Schottky Diode and IGBT in the industry-standard TO-247 package
Voltage
600 / 1200 / 1700 V*
Technology
SiC MOSFET · SiC SBD · IGBT
Package
TO-247-3 / TO-247-4
DICIO TO-247 Discrete products apply proprietary SiC MOSFET, SiC SBD and Trench-Gate IGBT dies to the most widely adopted through-hole power package.
The four-lead Kelvin Source version separates the gate-return path from the power-source path for precise gate control under high di/dt conditions. Its standard footprint supports existing inverter, PSU and charger boards.
Downloads & Resources
Resources for TO-247 Discrete
* In development

